量子阱宽度,quantum well width
1)quantum well width量子阱宽度
2)channel thickness量子阱宽
1.52AlAs high electron mobility transistor(HEMT)structures with differentchannel thickness of 10—35 nm have been investigated in magnetic fields up to 13 T at 1.4K下不同量子阱宽度(10-35nm)的InP基高电子迁移率晶体管材料的二维电子气特性。
3)non-uniform well-thickness multi-quantum wells非均匀阱宽多量子阱
1.In this paper,non-uniform well-thickness multi-quantum wells structure was adopted to widen the output spectrum of superluminescent diode.为了制备高功率半导体超辐射发光管,并且得到比较大的光谱宽度、大的单程增益和抑制电流饱和,我们研究设计了具有850nm辐射波长的GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光二极管结构,采用分子束外延(MBE)方法进行了材料制备。
4)the width of potential well势阱宽度
5)Quantum well量子阱
1.Resonant modes in quantum well structure composed of photonic crystals with different lattice constants;不同晶格常数光子晶体构成的光量子阱中的共振模
2.Optical properties and material growth of GaAs(110) quantum wells;GaAs(110)量子阱材料生长和光学特性
3.Light emitting model of GaN LED quantum well;GaN LED量子阱光发射模型
英文短句/例句
1.semiconductor quantum well laser diode量子阱半导体激光管
2.MQW semiconductor laser多量子阱半导体激光器
3.quantum-well semiconductor laser量子阱半导体激光器
4.quantum well heterojunction laser量子阱异质结激光器
5.Researches on AlGaInN QW LED;AlGaInN量子阱LED的研究
6.Optimization Design of Quantum Wells Number in Active Cavity of Quantum Well LD量子阱LD有源区量子阱数目的优化设计
7.Studies on the Nonlinear Optical Properties in Coupled Quantum Wells and Cylindrical Quantum Dot Quantum Well非对称耦合量子阱、柱形量子点量子阱中非线性光学性质研究
8.The Energy of an Exciton in a Wurtzite GaN/Al_xGa_(1-x)N Quantum Well纤锌矿GaN/Al_xGa_(1-x)N量子阱中激子能量
9.Energy of Bound Polaron in Wurtzite GaN/AlN Quantum Well纤锌矿GaN/AlN量子阱中束缚极化子能量
10.Research on energy level properties of symmetric coupled quantum well and optimization for quantum well structures;对称耦合量子阱能级特性研究与量子阱结构优化
11.Tunneling of Electrons Through Parabolic Quantum Well Structures with Double Barriers;双势垒抛物量子阱结构中的电子隧穿
12.The Theoretical Study of Particle Transmission in Quantum Well System量子阱系统中对粒子透射的理论研究
13.Properties of the Weak-coupling Polaron in Infinite Quantum Well无限深量子阱中弱耦合极化子的性质
14.Study on Polaron Effect in Quantum Wire and Quantum Well with Parabolic Confining Potential抛物量子线、量子阱中极化子效应的研究
15.STUDY OF THE PL SPECTRA OF ASYMMETRIC COUPLED DOUBLE QUANTUM WELLS非对称耦合双量子阱的荧光光谱研究
16.Experimentally Study the Electromechanical Character of Quantum Well Thin Film Structure;量子阱薄膜结构的机电特性实验研究
17.A Study of Photocurrents of Terahertz Quantum-Well Photodetectors;太赫兹量子阱探测器光电流谱的研究
18.Study on InGaAs/GaAs Strained Quantum well Lasers;InGaAs/GaAs应变量子阱半导体激光器的研究
相关短句/例句
channel thickness量子阱宽
1.52AlAs high electron mobility transistor(HEMT)structures with differentchannel thickness of 10—35 nm have been investigated in magnetic fields up to 13 T at 1.4K下不同量子阱宽度(10-35nm)的InP基高电子迁移率晶体管材料的二维电子气特性。
3)non-uniform well-thickness multi-quantum wells非均匀阱宽多量子阱
1.In this paper,non-uniform well-thickness multi-quantum wells structure was adopted to widen the output spectrum of superluminescent diode.为了制备高功率半导体超辐射发光管,并且得到比较大的光谱宽度、大的单程增益和抑制电流饱和,我们研究设计了具有850nm辐射波长的GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光二极管结构,采用分子束外延(MBE)方法进行了材料制备。
4)the width of potential well势阱宽度
5)Quantum well量子阱
1.Resonant modes in quantum well structure composed of photonic crystals with different lattice constants;不同晶格常数光子晶体构成的光量子阱中的共振模
2.Optical properties and material growth of GaAs(110) quantum wells;GaAs(110)量子阱材料生长和光学特性
3.Light emitting model of GaN LED quantum well;GaN LED量子阱光发射模型
6)photonic quantum well光量子阱
1.Modulated photon confined states with graded-indexphotonic quantum well structure;渐变折射率光量子阱对束缚态能级的调整
延伸阅读
单量子阱(见量子阱)单量子阱(见量子阱)single quantum well单且子阱sillgle quantum well见量子阱。
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