量子阱材料,quantum well material
1)quantum well material量子阱材料
1.The studies on free electron laser (FEL) andquantum well materials (QWM) are both the front domain of high-tech in nowadays.当前对自由电子激光和量子阱材料的研究同处于高科技的前沿，但自由电子激光对量子阱材料的辐照效应研究却进行得很少，因而这是一个相当新颖的课题。
英文短句/例句
1.Study on Irradiation Effects of GaAs/AlGaAs Multiple Quantum Wells;GaAs/AlGaAs多量子阱材料的辐照效应研究
2.A Study of Multiple Quantum Wells for All-Optical Switching on Spin Electronics;用于电子自旋光开关的多量子阱材料研究
3.Study on Irradiation Effects of Quantum Well Material Caused by Free Electron Laser;自由电子激光对量子阱材料的辐照效应研究
4.Characterization and Growth of 1.2μm Highly Strained InGaAs/GaAs Quantum Well;1.2μm InGaAs/GaAs高应变量子阱材料的生长及特性研究
5.Study of Resonant Tunneling Effects in Zn_(1-x)Cd_xSe/ZnS Quantum WellZn_(1-x)Cd_xSe/ZnS量子阱材料的共振遂穿特性研究
6.Study on the Doped-semiconductors and Quantum Well Materials Irradiated by the Free-electron Lasers;自由电子激光对掺杂半导体及半导体量子阱材料的辐照研究
7.Study on Non-linear Optical Properties of nc-Si/SiN_x MQW with Z-scan MethodZ扫描法研究nc-Si/SiN_x多量子阱材料非线性光学特性
8.GaSb Based Quantum Well Laser MaterialsGaSb基锑化物量子阱激光器材料的研究
9.Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser DiodesGaN基激光器多量子阱垒材料的研究
10.Quantum well infrared photodetector material with photoluminescence measurement多量子阱红外探测材料的光致荧光谱
11.Research on the Electronic Properties of InAlGaN Multiple Quantum Well Structures;InAlGaN材料系多量子阱结构电子学特性的研究
12.Optimum Structural Design for QW Laser Material and Grown by MOCVD;MOCVD生长量子阱激光器材料及结构的优化设计
13.Structure Design and Characteristic of GaSb Substrate Multiple Quantum-well Laser Materials;GaSb基量子阱激光器材料的结构设计与特性表征
14.InP Based InGaAlAs/InGaAsSb Strained Quantum Well Laser Materials and Design;InP基InGaAlAs/InGaAsSb应变量子阱激光器材料与设计研究
15.Assessing the Epitaxy Structure of Quantum Well Infrared Photodetector by Photoluminescence Measurement用PL谱评测多量子阱红外探测器外延材料
16.Study on Photoluminescence Spectrum of Quantum Well Infrared Photodetector Epitaxy StructureGaAs/AlGaAs多量子阱红外探测器外延材料PL谱研究
17.Omnidirectional and Multiple-Channeled Filters of Photonic Quantum-well Structures Containing Single-negative Materials基于含单负材料光量子阱结构的全向多通道滤波器
18.Research on the Electron Trap and Properties of ZnO Semiconductor Material;氧化锌基半导体材料电子陷阱形成及性能研究
相关短句/例句
AlGaAs/GaAs quantum wellAlGaAs/GaAs量子阱材料
3)strained quantum well material应变量子阱材料
4)superlattice and quantum wells超晶格、量子阱材料
5)multiple quantum well recording materials(MQWs)多量子阱记录材料
6)InGaAs/InGaAsP MQW materialnGaAs/InGaAsP多量子阱材料
延伸阅读
单量子阱(见量子阱)单量子阱(见量子阱)single quantum well单且子阱sillgle quantum well见量子阱。
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